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A New Host Material for Electrophosphorescent Devices
P.-I. Shih, C.-H. Chien, F.-I. Wu, C.-F. Shu*
National Chiao Tung University, Hsinchu, Taiwan
23 January 2008 (online)
The authors present a facile synthesis of TFTPA, and demonstrate its utility as a host material for iridium-based phosphorescent light-emitting diodes (LEDs). TFTPA is found to have superior properties to both CBP and mCP in terms of its high glass transition temperature (T g = 186 °C) and large (estimated) triplet energy gap (2.89 eV). Additionally, due to the steric bulk of the TFTPA structure, bimolecular interactions of the phosphors is minimized resulting in some of the highest reported efficiencies in electrophosphorescent devices.